| PART |
Description |
Maker |
| K3S7V2000M-TC15 K3S7V2000M-TC12 K3S7V2000M-TC10 K3 |
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM 6400位（4Mx16 / 2Mx32）同步MASKROM
2M X 32 MASK PROM, 6 ns, PDSO86
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY51V65173HGJT |
4Mx16|3.3V|4K|6|FP/EDO DRAM - 64M 4Mx16 | 3.3 | 4K的| 6 |计划生育/ EDO公司的DRAM - 6400
|
Citizen Finetech Miyota
|
| K5P6480YCM-T085 |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
|
Samsung Electronic
|
| K5C6417YTM/K5C6417YBM |
64M Bit (4Mx16) Four Bank NOR Flash Memory Data Sheet
|
Samsung Electronic
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KS88P4716 KS88C4716 KS88C4708 |
new SAM87RC family of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range of integrated peripherals, and various mas SAM87RC家庭位单芯片CMOS微控制器提供了快速，高效的CPU，一个广泛的集成外设，以及各种马
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UPD4664312-X UPD4664312F9-B65X-CR2 UPD4664312F9-BE |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
|
| TC58V64BFT |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| MX26L6420 MX26L6420MC-12 MX26L6420MC-90 MX26L6420M |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
|
MCNIX[Macronix International]
|
| MX29LV640BUXBI-90G MX29LV640BU MX29LV640BUTC-12 MX |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX25U6435E |
64M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
